050-7208 rev a 6-2010 maximum ratings all ratings per die: t c = 25c unless otherwise speci ed . caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. static electrical characteristics ? ultra low r ds(on) ? low miller capacitance ? ultra low gate charge, q g ? avalanche energy rated ? extreme dv / dt rated ? dual die (parallel) ? popular t-max package super junction mosfet c power semiconductors o o l mos "coolmos? comprise a new family of transistors developed by in neon technologies ag. "coolmos" is a trade- mark of in neon technologies ag." g d s unless stated otherwise, microsemi discrete mosfets contain a single mosfet die. this device is made with two parallel mosfet die. it is intended for switch-mode operation. it is not suitable for linear mode operation. microsemi website - http://www.microsemi.com APT106N60B2C6 600v 106a 0.035 symbol parameter APT106N60B2C6 unit v dss drain-source voltage 600 volts i d continuous drain current @ t c = 25c 1 106 amps continuous drain current @ t c = 100c 68 i dm pulsed drain current 2 318 v gs gate-source voltage continuous 20 volts p d total power dissipation @ t c = 25c 833 watts t j ,t stg operating and storage junction temperature range -55 - to 150 c t l lead temperature: 0.063" from case for 10 sec. 260 i ar avalanche current 2 18.6 amps e ar repetitive avalanche energy 3 ( id = 18.6a, vdd = 50v ) 3.4 e as single pulse avalanche energy ( id = 18.6a, vdd = 50v ) 2200 mj symbol characteristic / test conditions min typ max unit bv (dss) drain-source breakdown voltage (v gs = 0v, i d = 500 a) 600 volts r ds(on) drain-source on-state resistance 4 (v gs = 10v, i d = 53a) 0.035 ohms i dss zero gate voltage drain current (v ds = 600v, v gs = 0v) 50 a zero gate voltage drain current (v ds = 600v, v gs = 0v, t c = 150c) 500 i gss gate-source leakage current (v gs = 20v, v ds = 0v) 200 na v gs(th) gate threshold voltage (v ds = v gs , i d = 3.4ma) 2.5 3 3.5 volts
050-7208 rev a 6-2010 dynamic characteristics APT106N60B2C6 source-drain diode ratings and characteristics thermal characteristics 1 continuous current limited by package lead temperature. 2 repetitive rating: pulse width limited by maximum junction temperature 3 repetitive avalanche causes additional power losses that can be calculated as p av = e ar *f . pulse width tp limited by tj max. microsemi reserves the right to change, without notice, the speci cations and information contained herein. 4 pulse test: pulse width < 380 s, duty cycle < 2% 5 see mil-std-750 method 3471 6 eon includes diode reverse recovery. 7 maximum 125c diode commutation speed = di/dt 600a/ s 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 10 -5 10 -4 10 -3 10 -2 0.1 1 10 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 25v f = 1 mhz 8390 pf c oss output capacitance 7115 c rss reverse transfer capacitance 229 q g total gate charge 5 v gs = 10v v dd = 300v i d = 106a @ 25c 308 nc q gs gate-source charge 50 q gd gate-drain ("miller ") charge 160 t d(on) turn-on delay time inductive switching v gs = 15v v dd = 400v i d = 106a @ 25c r g = 4.3 25 ns t r rise time 79 t d(off) turn-off delay time 277 t f fall time 164 e on turn-on switching energy 6 inductive switching @ 25c v dd = 400v, v gs = 15v i d = 106a, r g = 4.3 2995 j e off turn-off switching energy 3775 e on turn-on switching energy 6 inductive switching @ 125c v dd = 400v, v gs = 15v i d =106a, r g = 4.3 4055 e off turn-off switching energy 4200 symbol characteristic / test conditions min typ max unit i s continuous source current (body diode) 92 amps i sm pulsed source current 2 (body diode) 318 v sd diode forward voltage 4 (v gs = 0v, i s = -106a) 0.9 1.2 volts dv / dt peak diode recovery dv / dt 7 15 v/ns t rr reverse recovery time (i s = -106a, di / dt = 100a/ s) t j = 25c 1400 ns q rr reverse recovery charge (i s = -106a, di / dt = 100a/ s) t j = 25c 45 c i rrm peak recovery current (i s = -106a, di / dt = 100a/ s) t j = 25c 47 amps symbol characteristic min typ max unit r jc junction to case 0.15 c/w r ja junction to ambient 40
050-7208 rev a 6-2010 typical performance curves APT106N60B2C6 0.60 0.70 0.80 0.90 1.00 1.10 1.20 -50 0 50 100 150 .85 .90 0 .95 .00 .05 1 .10 .15 1 .20 -50 0 50 100 150 0 0.40 0.80 1.20 1.60 2.00 0 50 100 150 200 250 0 20 40 60 80 100 120 25 50 75 100 125 150 0 20 40 60 80 100 120 140 0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 150 175 200 225 0 5 10 15 20 25 30 v gs = 20v t j = 25c t j = -55c v ds , drain-to-source voltage (v) figure 2, low voltage output characteristics i c , drain current (a) t j = 125c v gs , gate-to-source voltage (v) figure 3, transfer characteristics i d , drain current (a) t c , case temperature (c) figure 5, maximum drain current vs case temperature i d , drain current (a) i d, drain current (a) figure 4, r ds (on) vs drain current t j , junction temperature (c) figure 6, breakdown voltage vs temperature bv dss , drain-to-source breakdown voltage (normalized) t c , case temperature (c) figure 8, threshold voltage vs temperature v gs (th), threshold voltage (normalized) 0 0.50 1.00 1.50 2.00 2.50 3.00 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) figure 7, on-resistance vs temperature r ds(on) , drain-to-source on resistance (normalized) v gs = 10v v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 106a i d , drain current (a) v ds , drain-to-source voltage (v) figure 9, maximum safe operating area 0.1 1 10 100 1000 1 10 100 1000 100ms 100s 10ms 1ms 15v 4.5v 5.5v 5v 6.0v 6.5v 7.0v 10v r ds(on) , drain-to-source on resistance
050-7208 rev a 6-2010 typical performance curves APT106N60B2C6 0 2000 4000 6000 8000 10000 12000 14000 0 10 20 30 40 50 0 50 00 50 00 50 0 50 100 150 200 1 10 100 200 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 50 100 150 200 250 300 350 400 0 50 100 150 200 0 2 4 6 8 10 12 14 0 100 200 300 400 0 10 100 1000 10,000 20,000 30,000 0 100 200 300 400 500 c iss t j = =25c v ds =480v v ds , drain-to-source voltage (v) figure 10, capacitance vs drain-to-source voltage c, capacitance (pf) v ds = 300v q g , total gate charge (nc) figure 11, gate charges vs gate-to-source voltage v gs , gate-to-source voltage (volts) i d (a) figure 13, delay times vs current t d(on) and t d(off) (ns) v sd, source-to-drain voltage (v) figure 12, source-drain diode forward voltage i dr , reverse drain current (a) i d (a) figure 14 , rise and fall times vs current t r , and t f (ns) r g , gate resistance (ohms) figure 16, switching energy vs gate resistance switching energy (uj) 0 1000 2000 3000 4000 5000 6000 7000 8000 0 50 100 150 200 i d (a) figure 15, switching energy vs current switching energy ( j) c oss c rss t j = +150c i d = 106a v dd = 400v r g = 4.3 t j = 125c l = 100 h t d(on) t d(off) v dd = 400v r g = 4.3 t j = 125c l = 100 h e on includes diode reverse recovery. e on e off v dd = 400v r g = 4.3 t j = 125c l = 100 h t r t f e on e off v dd = 400v i d = 106a t j = 125c l = 100 h e on includes diode reverse recovery. v ds = 120v
figure 17, turn-on switching waveforms and de nitions figure 18, turn-off switching waveforms and de nitions i c d.u.t. apt30df60 v ce figure 20, inductive switching test circuit v dd g figure 19, inductive switching test circuit t j = 125c collector current collector voltage gate voltage 5% 10% t d(on) 90% 10% t r 5% switching energy t j = 125c collector voltage collector current gate voltage switching energy 0 t d(off) 10% t f 90% 100% sn plated t-max? (b2) package outline 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. dimensions in millimeters and (inches) 050-7208 rev a 6-2010 microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. typical performance curves APT106N60B2C6 apt60dq60
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